BC212 PNP 50V 0.3A

EGP1.50

EGP1.50

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Characteristics of the BC212 bipolar transistor

  • Type – p-n-p
  • Collector-Emitter Voltage: -50 V
  • Collector-Base Voltage: -60 V
  • Emitter-Base Voltage: -5 V
  • Collector Current: -0.2 A
  • Collector Dissipation – 0.3 W
  • DC Current Gain (hfe) – 60 to 400
  • Transition Frequency – 200 MHz
  • Noise Figure – 10 dB
  • Operating and Storage Junction Temperature Range -65 to +150 °C

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