Name: IRF620 N-Channel MOSFET (5A,200V,0.8 Ohm)
SKU: 160
Availability: InStock

IRF620 N-Channel MOSFET (5A,200V,0.8 Ohm)

EGP17.00

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Features:

– Single Pulse Avalanche Energy Rated

– SOA is Power Dissipation Limited

– Nanosecond Switching Speeds

– Linear Transfer Characteristics

– High Input Impedance

Drain to Source Voltage: 200V max.

Drain to Gate Voltage (RGS = 20kΩ): 200V max.

Continuous Drain Current: 5.0A max.

Pulsed Drain Current: 20A max.

Gate to Source Voltage: +/-20V max.

Maximum Power Dissipation: 40W max.

Single Pulse Avalanche Energy Rating: 85mJ

Operating and Storage Temperature: -55 to 150 Degrees C.

Drain to Source On Resistance: 0.8 ohms typ.

Rise/Fall Time: 30ns typ.

IRF620 N-Channel MOSFET (5A,200V,0.8 Ohm)