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IRF3205 – 55V N-Channel HEXFET Power MOSFET
EGP28.00
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|
SPECIFICATION
|
VALUE
|
|---|---|
|
Family
|
IRF3205
|
|
Category
|
Power MOSFET
|
|
Configuration
|
Single
|
|
Maximum Power Dissipation
|
200000mW
|
|
Number of Elements per Chip
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1
|
|
Channel Mode
|
Enhancement
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|
Channel Type
|
N
|
|
Maximum Continuous Drain Current
|
110A
|
|
Maximum Drain Source Resistance
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0.008Ohm@10V
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|
Maximum Drain Source Voltage
|
55V
|
|
Maximum Gate Source Voltage
|
±20V
|
|
Typical Fall Time
|
65ns
|
|
Typical Gate Charge @ Vgs
|
146nC(Max)@10V
|
|
Typical Input Capacitance @ Vds
|
3247pF@25V
|
|
Typical Rise Time
|
101ns
|
|
Typical Turn-Off Delay Time
|
50ns
|
|
Typical Turn-On Delay Time
|
14ns
|
|
Minimum Operating Temperature
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-55°C
|
|
Maximum Operating Temperature
|
175°C
|
|
Mounting
|
Through Hole
|
|
Pin_Count
|
3
|
|
Supplier Package
|
TO-220AB
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|
Product Width
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4.69mm(Max)
|
|
Product Height
|
8.77mm(Max)
|
|
Product Length
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10.54mm(Max)
|
|
Product Type
|
MOSFET
|
